Germanium (Ge) nanowires were grown via
the vapor-liquid-solid growth mechanism
and surface-doped with manganese (Mn).
The nanowires were annealed at 350˚ C for
30 min to promote the Mn diffusion.
Pulsed-laser local electrode atom probe
tomography was used to determine the
concentration and distribution of Mn in the
Ge nanowires....