Germanium (Ge) nanowires were grown via
the vapor-liquid-solid growth mechanism
and surface-doped with manganese (Mn).
The nanowires were annealed at 350˚ C for
30 min to promote the Mn diffusion.
Pulsed-laser local electrode atom probe
tomography was used to determine the
concentration and distribution of Mn in the
Ge nanowires....
Chemical vapor deposition was used to
synthesize CdS nanowires via the vaporliquid-solid
growth mechanism. After Ti/Au
contacts were patterned to the nanowires
using electron beam lithography, photoresponse
studies were conducted. A significant
response was observed when the
wires were exposed to visible light; this
occurred as electrons in the nanowires...