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Electronic and Magnetoresistive Properties of InMnAs Films and Heterojunctions

Description:

The electronic transport and magnetoresistive properties of the ferromagnetic semiconductor In1-xMnxAs were investigated in order to determine the nature of the transport and ferromagnetism in the films. p-InMnAs/n-InAs and metal/oxide/InMnAs heterojunctions were fabricated and characterized to elucidate the transport and magnetoresistance mechanisms at these technologically important interfaces. The electronic transport...

Keyword:

p-n junctions, InMnAs, and magnetic semiconductors

Subject:

Materials Science and Engineering

Creator:

Steven J. May

Owner:

Scholarly Digital Publishing

Date Uploaded:

05/14/2018

Date Modified:

05/14/2018

Date Created:

2007-02-19

Resource Type:

Dissertation