This thesis explores the potential of two-dimensional (2D) or van der Waals (vdW) materials for printed optoelectronic devices. The research focuses on the development of processing, imaging, and modeling of materials and thin-film devices to optimize performance and introduce novel properties. A gate-dependent resistor network model is presented that establishes distinct microstructure- performance relationships arising from near-edge and intersheet resistances in printed thin-film transistors. The model predicts that the removal of edge states can lead to higher mobilities, motivating the research in developing edge functionalization strategies. The study also examines the origin of the photoresponse in printed photodetectors. Optical microscopy-based methods were employed to determine the device topography, while local photoimpedance spectroscopy was used to characterize the photoconductive behavior. Lastly, the thesis investigates device concepts based on variable ion-binding rates in photoswitchable molecules and suggests future directions for developing hybrid organic-inorganic materials that facilitate the integration of memory with logic.

Creator

• Zhu, Zhehao

DOI

• https://doi.org/10.21985/n2-f6dc-8k50

Subject

• Materials Science

Language

• en

Alternate Identifier

• http://dissertations.umi.com/northwestern:16504
• etdadmin_upload_982806

Keyword

• scanning probe microscopy
• transition metal dichalcogenides
• thin-film transistors
• finite element simulation
• printed electronics
• 2D materials

Date created

• 2023-01-01

Resource type

• Dissertation

Rights statement

• In Copyright