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Investigation of Carrier Transport in Semiconductor Nanowires by Scanning Probe Techniques

Description:

In this work, electron beam induced current (EBIC) and scanning photocurrent microscopy (SPCM) were used to quantitatively investigate the electronic properties of silicon nanowire devices. For the first time, it was shown that minority carrier diffusion lengths in phosphorous-doped silicon nanowires are significantly reduced from their bulk values because of...

Keyword:

diode, diffusion length, carrier concentration, nanowire, silicon, and photocurrent

Subject:

Materials Science and Engineering

Creator:

Jonathan Edward Allen

Owner:

Scholarly Digital Publishing

Date Uploaded:

09/13/2018

Date Modified:

09/13/2018

Date Created:

2008-11-25

Resource Type:

Dissertation