Germanium (Ge) nanowires were grown via
the vapor-liquid-solid growth mechanism
and surface-doped with manganese (Mn).
The nanowires were annealed at 350˚ C for
30 min to promote the Mn diffusion.
Pulsed-laser local electrode atom probe
tomography was used to determine the
concentration and distribution of Mn in the
Chemical vapor deposition was used to
synthesize CdS nanowires via the vaporliquid-solid
growth mechanism. After Ti/Au
contacts were patterned to the nanowires
using electron beam lithography, photoresponse
studies were conducted. A significant
response was observed when the
wires were exposed to visible light; this
occurred as electrons in the nanowires...