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GasMBE Growth and Characterization of Strained Layer InP-GaInAs-AlInAs Quantum Cascade Lasers

Description:

The semiconductor-based Quantum Cascade Laser (QCL) offers several key advantages over gas lasers, solid-state lasers, and other semiconductor-based mid-infrared lasers. While the QCL has historically operated best in the λ ~ 7-9 μm range using InP-based materials, a major challenge has been to achieve a high-power, room-temperature continuous-wave (CW) operation...

Keyword:

Gas Source Molecular Beam Epitaxy MBE, intersubband, Compound Semiconductor, Mid-Infrared Laser, InP, and Quantum Cascade Laser

Subject:

Electrical and Computer Engineering

Creator:

Allan Joseph Evans

Owner:

Scholarly Digital Publishing

Date Uploaded:

09/14/2018

Date Modified:

09/14/2018

Date Created:

2008-05-22

Resource Type:

Dissertation