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Phototransistors Based on III-V Semiconductors and Low-Dimensional Materials for High-Speed Imaging at High Operating Temperatures

Description:

In this thesis, the optical gain mechanism in low-light conditions of phototransistor detectors (PTDs) is explored. An analytical formula is derived for the physical limit on the minimum number of detectable photons for PTDs. This formulation shows that the sensitivity of the PTD, regardless of its material composition, is related...

Keyword:

Phototransistor, Low-Dimensional photodetectors, InGaAs, Photodetector, Infrared Camera, and Short wave infrared

Subject:

Applied physics and Electrical engineering

Creator:

Rezaei, Mohsen

Owner:

Scholarly Digital Publishing

Language:

en

Date Uploaded:

02/12/2020

Date Created:

2018-01-01

Resource Type:

Dissertation

Alternate Identifier:

http://dissertations.umi.com/northwestern:14502 and etdadmin_upload_636639