Determining the Solid Solubility of Mn in GE Nanowires Using Pulsed Laser Atom Probe Tomography

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Germanium (Ge) nanowires were grown via the vapor-liquid-solid growth mechanism and surface-doped with manganese (Mn). The nanowires were annealed at 350˚ C for 30 min to promote the Mn diffusion. Pulsed-laser local electrode atom probe tomography was used to determine the concentration and distribution of Mn in the Ge nanowires. Analysis showed that the amount of Mn in the Ge was ~10-3–10-4, depending on the sample and analysis volume in question. Mn-doped Ge nanowires have potential applications as magnetic semiconductors.

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  • 07/19/2018
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